US 12,089,395 B2
Semiconductor device and semiconductor memory device
Yuta Sato, Yokohama Kanagawa (JP); Tomomasa Ueda, Yokohama Kanagawa (JP); Nobuyoshi Saito, Ota Tokyo (JP); and Keiji Ikeda, Kawasaki Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 9, 2021, as Appl. No. 17/470,871.
Claims priority of application No. 2021-047614 (JP), filed on Mar. 22, 2021.
Prior Publication US 2022/0302120 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 12/00 (2023.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01)
CPC H10B 12/30 (2023.02) [H01L 29/24 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide semiconductor layer including a first region, a second region, and a third region provided between the first region and the second region;
a gate electrode;
a gate insulating layer provided between the third region and the gate electrode;
a first electrode electrically connected to the first region;
a second electrode electrically connected to the second region;
a first conductive layer provided in at least one of positions between the first region and the first electrode or between the second region and the second electrode, and the first conductive layer containing a first metal element and at least one element of oxygen (O) or nitrogen (N); and
a second conductive layer provided between the oxide semiconductor layer and the first conductive layer, the second conductive layer containing oxygen (O) and at least one element selected from the group consisting of indium (In), zinc (Zn), tin (Sn), and cadmium (Cd), and the second conductive layer having a thickness in a first direction from the first conductive layer to the second conductive layer, which is larger than a thickness in the first direction of the first conductive layer,
wherein the first metal element is at least one element selected from the group consisting of titanium (Ti), tungsten (W), copper (Cu), aluminum (Al), tantalum (Ta), and molybdenum (Mo).