US 12,088,276 B2
Method of manufacturing an FBAR structure
Jian Wang, Shenzhen (CN)
Assigned to Shenzhen Newsonic Technologies Co., Ltd., Shenzhen (CN)
Filed by Shenzhen Newsonic Technologies Co., Ltd., Shenzhen (CN)
Filed on Aug. 11, 2022, as Appl. No. 17/885,704.
Application 17/885,704 is a continuation of application No. 17/648,222, filed on Jan. 18, 2022, granted, now 11,463,070.
Prior Publication US 2022/0393663 A1, Dec. 8, 2022
Int. Cl. H03H 9/17 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01)
CPC H03H 9/173 (2013.01) [H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/132 (2013.01); H03H 9/176 (2013.01); H03H 2003/021 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for forming a film bulk acoustic resonator (FBAR) structure, comprising:
sequentially forming a top electrode layer, a piezoelectric layer, and a bottom electrode layer on a rear side of a first substrate;
patterning the bottom electrode layer to form a bottom electrode;
forming a dielectric layer on a rear side of the bottom electrode;
bonding a bonding substrate onto a rear side of the dielectric layer;
removing the first substrate;
after removing the first substrate, patterning the top electrode layer to form a top electrode;
forming an opening in the bonding substrate;
after forming the opening in the bonding substrate, selectively removing a portion of the dielectric layer to form a cavity by etching and using the bonding substrate with the opening as an etching mask, the cavity exposing a portion of a side surface of the bottom electrode; and
bonding a bottom cap wafer onto a rear side of the bonding substrate to seal the cavity.