US 12,088,059 B2
Light emitting element
Kentaro Fujii, Tokyo (JP); Tatsushi Hamaguchi, Tokyo (JP); and Rintaro Koda, Tokyo (JP)
Assigned to SONY CORPORATION, Tokyo (JP)
Appl. No. 17/281,532
Filed by SONY CORPORATION, Tokyo (JP)
PCT Filed Sep. 6, 2019, PCT No. PCT/JP2019/035195
§ 371(c)(1), (2) Date Mar. 30, 2021,
PCT Pub. No. WO2020/075428, PCT Pub. Date Apr. 16, 2020.
Claims priority of application No. 2018-193400 (JP), filed on Oct. 12, 2018.
Prior Publication US 2022/0045476 A1, Feb. 10, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/028 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/0281 (2013.01) [H01S 5/18369 (2013.01); H01S 5/343 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A light emitting element, comprising:
a layered structure that includes:
a first light reflecting layer that includes a first plurality of thin films;
a light emitting structure; and
a second light reflecting layer that includes a second plurality of thin films, wherein
the light emitting structure is between the first light reflecting layer and the second light reflecting layer, and
the light emitting structure includes:
a first compound semiconductor layer on the first light reflecting layer;
an active layer on the first compound semiconductor layer; and
a second compound semiconductor layer on the active layer;
an intermediate layer between the second compound semiconductor layer and the second light reflecting layer; and
an electrode between the intermediate layer and the second compound semiconductor layer, wherein
a first surface of the intermediate layer faces the electrode,
a second surface of the intermediate layer is in contact with the second light reflecting layer, and
a value of a surface roughness of the second surface of the intermediate layer is less than a value of a surface roughness of the first surface of the intermediate layer.