US 12,087,938 B2
Negative electrode for power storage device, power storage device, and electric device
Hiroyuki Miyake, Kanagawa (JP); Nobuhiro Inoue, Kanagawa (JP); Ryo Yamauchi, Kanagawa (JP); Mako Motoyoshi, Kanagawa (JP); Takahiro Kawakami, Kanagawa (JP); Mayumi Mikami, Kanagawa (JP); Miku Fujita, Kanagawa (JP); and Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., LTD., Atsugi (JP)
Filed on Dec. 9, 2016, as Appl. No. 15/374,048.
Claims priority of application No. 2015-242739 (JP), filed on Dec. 11, 2015; and application No. 2016-095789 (JP), filed on May 12, 2016.
Prior Publication US 2017/0170466 A1, Jun. 15, 2017
Int. Cl. H01M 4/36 (2006.01); H01G 11/06 (2013.01); H01G 11/28 (2013.01); H01G 11/30 (2013.01); H01G 11/36 (2013.01); H01G 11/50 (2013.01); H01M 4/134 (2010.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01)
CPC H01M 4/366 (2013.01) [H01G 11/06 (2013.01); H01G 11/28 (2013.01); H01G 11/30 (2013.01); H01G 11/36 (2013.01); H01G 11/50 (2013.01); H01M 4/134 (2013.01); H01M 4/386 (2013.01); H01M 4/626 (2013.01); H01M 10/0525 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A negative electrode for a power storage device comprising:
a negative electrode active material layer comprising a particle over a current collector, the particle comprising:
a first region comprising silicon and lithium;
a second region comprising titanium and one of oxygen and nitrogen;
a third region comprising titanium and silicon; and
a fourth region comprising titanium and silicon;
wherein the third region covers the first region, the second region, and the fourth region,
wherein the fourth region has a larger concentration of silicon than the third region,
wherein the first region is in contact with at least part of the second region,
wherein in an interfacial region between the first region and the second region a weight percentage of the silicon continuously changes, and
wherein the second region is in contact with at least part of the fourth region.