US 12,087,880 B2
Epitaxial oxide materials, structures, and devices
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Feb. 22, 2022, as Appl. No. 17/652,019.
Application 17/652,019 is a continuation of application No. PCT/IB2021/060466, filed on Nov. 11, 2021.
Application PCT/IB2021/060466 is a continuation in part of application No. PCT/IB2021/060414, filed on Nov. 10, 2021.
Application PCT/IB2021/060466 is a continuation in part of application No. PCT/IB2021/060413, filed on Nov. 10, 2021.
Application PCT/IB2021/060466 is a continuation in part of application No. PCT/IB2021/060427, filed on Nov. 10, 2021.
Prior Publication US 2023/0143766 A1, May 11, 2023
Int. Cl. H01L 33/26 (2010.01); H01L 21/02 (2006.01); H01L 23/66 (2006.01); H01L 27/15 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/16 (2010.01); H01L 33/18 (2010.01); H01L 33/62 (2010.01); H01S 5/34 (2006.01)
CPC H01L 33/26 (2013.01) [H01L 21/02178 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/0228 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 23/66 (2013.01); H01L 27/15 (2013.01); H01L 29/151 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01); H01L 29/7869 (2013.01); H01L 33/002 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/62 (2013.01); H01S 5/34 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 2223/6627 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising an epitaxial oxide heterostructure, comprising:
a substrate;
a first epitaxial oxide layer comprising (Nix1Mgy1Zn1-x1-y1)(Alq1Ga1-q1)2O4 wherein 0≤x1≤1, 0≤y1≤1 and 0≤q1≤1; and
a second epitaxial oxide layer comprising (Nix2Mgy2Zn1-x2-y2)(Alq2Ga1-q2)2O4 wherein 0≤x2≤1, 0≤y2≤1 and 0≤q2≤1,
wherein at least one condition selected from x1≠x2, y1≠y2, and q1≠q2 is satisfied.