US 12,087,879 B2
Display device and method of manufacturing light emitting device
Euijoon Yoon, Seoul (KR); Jehong Oh, Seoul (KR); Jungel Ryu, Seoul (KR); Seungmin Lee, Seoul (KR); and Jongmyeong Kim, Uiwang-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 19, 2023, as Appl. No. 18/303,423.
Application 18/303,423 is a continuation of application No. 17/238,196, filed on Apr. 22, 2021, granted, now 11,705,537.
Claims priority of application No. 10-2020-0049136 (KR), filed on Apr. 23, 2020; and application No. 10-2021-0023123 (KR), filed on Feb. 22, 2021.
Prior Publication US 2023/0299234 A1, Sep. 21, 2023
Int. Cl. H01L 33/00 (2010.01); H01L 25/075 (2006.01); H01L 33/16 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/24 (2013.01) [H01L 25/0753 (2013.01); H01L 33/0095 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of manufacturing a light emitting device, comprising:
preparing a patterned substrate, which includes a substrate, a polycrystalline layer on the substrate, and a seed pattern protruding above the polycrystalline layer; and
performing a metal organic chemical vapor deposition process on the patterned substrate to form a light emitting device and an epitaxial layer on the seed pattern and the polycrystalline layer, respectively,
wherein a growth rate of the light emitting device on the seed pattern is higher than a growth rate of the epitaxial layer on the polycrystalline layer, during the metal organic chemical vapor deposition process.