US 12,087,876 B2
Micro-electronic element transfer method
Yun-Li Li, MiaoLi County (TW); and Yi-Chun Shih, MiaoLi County (TW)
Assigned to PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed by PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed on Sep. 11, 2023, as Appl. No. 18/464,297.
Application 18/464,297 is a division of application No. 17/087,632, filed on Nov. 3, 2020, granted, now 11,799,052.
Claims priority of application No. 109125053 (TW), filed on Jul. 24, 2020.
Prior Publication US 2023/0420601 A1, Dec. 28, 2023
Int. Cl. H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 33/64 (2010.01)
CPC H01L 33/005 (2013.01) [H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 33/642 (2013.01); H01L 2933/0066 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A micro-electronic element transfer method, comprising:
configuring a first conveyer portion to output a plurality of micro-electronic elements;
disposing a substrate on a first rolling component, moving the substrate through rolling of the first rolling component, wherein a plurality of bumps are disposed on the substrate;
irradiating the bumps for heating by a light source device so that the bumps generate a phase transition; and
respectively bonding the micro-electronic elements to the bumps when the micro-electronic elements are outputted from the first conveyer portion, wherein a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps so as to dispose the micro-electronic elements on the substrate.