	US 12,087,856 B2
	Field effect transistor
Kohei Sasaki, Saitama (JP)
Assigned to Tamura Corporation, Tokyo (JP); and Novel Crystal Technology, Inc., Saitama (JP)
Filed by TAMURA CORPORATION, Tokyo (JP); and Novel Crystal Technology, Inc., Saitama (JP)
Filed on Feb. 8, 2023, as Appl. No. 18/166,062.
Application 18/166,062 is a continuation of application No. 16/651,877, granted, now 11,616,138, previously published as PCT/JP2018/035725, filed on Sep. 26, 2018.
Claims priority of application No. 2017-191741 (JP), filed on Sep. 29, 2017.
Prior Publication US 2023/0197844 A1, Jun. 22, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/808 (2006.01)

CPC H01L 29/7813 (2013.01) [H01L 29/1095 (2013.01); H01L 29/24 (2013.01); H01L 29/41741 (2013.01); H01L 29/8083 (2013.01)]

6 Claims

1. A trench junction field-effect transistor without using a p-type Ga₂O₃-based single crystal, comprising:

an n-type semiconductor layer comprising an n-type Ga₂O₃-based single crystal and having a plurality of trenches opening on one surface;

a gate electrode buried in each of the plurality of trenches;

a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer comprising the n-type Ga₂O₁-based single crystal; and

a drain electrode directly or indirectly connected to the n-type semiconductor layer comprising the n-type Ga₂O₃-based single crystal on an opposite side to the source electrode,

wherein the gate electrode is buried in each of the trenches in a state of being prevented from contacting the source electrode by a dielectric film,

wherein the trench junction field-effect transistor does not include a region having a p-type Ga₂O₃-based single crystal,

wherein the gate electrode comprises a p-type semiconductor, and

wherein the gate electrode comprising the p-type semiconductor and the n-type semiconductor layer comprising the n-type Ga₂O₃-based single crystal are in contact with each other to form a p-n junction.