US 12,087,840 B2
Semiconductor device and capacitor including hydrogen-incorporated oxide layer
Taehwan Moon, Suwon-si (KR); Keunwook Shin, Yongin-si (KR); and Jinseong Heo, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 11, 2021, as Appl. No. 17/173,604.
Claims priority of application No. 10-2020-0033311 (KR), filed on Mar. 18, 2020.
Prior Publication US 2021/0296465 A1, Sep. 23, 2021
Int. Cl. H01L 29/51 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/517 (2013.01) [H01L 29/0638 (2013.01); H01L 29/0847 (2013.01); H01L 29/516 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a ferroelectric material layer, the ferroelectric material layer including an oxide with a concentration of hydrogen at about 0.7 at % or more, wherein at least a portion of the hydrogen is monatomic such that the monatomic hydrogen passivates oxygen vacancies in the oxide;
a first conductive layer on the ferroelectric material layer; and
an interfacial layer on an opposite side of the ferroelectric material layer compared to the first conductive layer,
wherein a concentration of hydrogen in the interfacial layer is greater than the concentration of hydrogen in the ferroelectric material layer, and
wherein the ferroelectric material layer comprises HfxZr1-xO2 (0<x<1) having a crystalline structure.