US 12,087,795 B2
Solid-state imaging device and electronic apparatus
Hideto Hashiguchi, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/608,962
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Apr. 6, 2020, PCT No. PCT/JP2020/015447
§ 371(c)(1), (2) Date Nov. 4, 2021,
PCT Pub. No. WO2020/235234, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 2019-094699 (JP), filed on May 20, 2019.
Prior Publication US 2022/0216246 A1, Jul. 7, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 27/14634 (2013.01) [H01L 21/76829 (2013.01); H01L 24/05 (2013.01); H01L 27/1462 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a first substrate including:
a first electrode;
a first modification layer;
a first low-permittivity layer on the first modification layer; and
a first joint surface that exposes the first electrode and the first modification layer; and
a second substrate including:
a second electrode;
a second modification layer;
a second low-permittivity layer on the second modification layer; and
a second joint surface that exposes the second electrode and the second modification layer, wherein
the first modification layer has higher hydrophilicity than the first low-permittivity layer,
the second modification layer has higher hydrophilicity than the second low-permittivity layer,
the first substrate and the second substrate form a laminate structure, and
the first joint surface and the second joint surface are electrically connected.