US 12,087,790 B2
Photoelectric conversion circuit, driving method, photoelectric detection substrate, and photoelectric detection device
Lubin Shi, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Sep. 27, 2021, as Appl. No. 17/486,799.
Claims priority of application No. 202011361232.1 (CN), filed on Nov. 27, 2020.
Prior Publication US 2022/0173142 A1, Jun. 2, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14614 (2013.01) [H01L 27/14643 (2013.01); H01L 27/14689 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A photoelectric conversion circuit, comprising:
a photoelectric conversion device, configured to receive incident light and generate an operating voltage after photoelectric conversion of the incident light;
a driving transistor, configured to generate a detection current according to the operating voltage photoelectrically converted by the photoelectric conversion device;
a first reset circuit, configured to supply a signal of an initialization signal terminal to a gate of the driving transistor in response to a signal of a reset control signal terminal;
a conduction control circuit, configured to conduct the photoelectric conversion device with the driving transistor in response to a signal at a scan signal terminal;
a threshold compensation circuit, configured to conduct the gate of the driving transistor and a second electrode of the driving transistor in response to the signal at the scan signal terminal; and
a read control circuit, configured to conduct a first power supply terminal with a first electrode of the driving transistor and conduct the second electrode of the driving transistor with a read output terminal, in response to a signal of a read control signal terminal.