US 12,087,787 B2
Solid-state image-capturing device and production method thereof, and electronic appliance
Tomohiko Asatsuma, Kanagawa (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Jul. 8, 2021, as Appl. No. 17/370,341.
Application 17/370,341 is a continuation of application No. 16/879,522, filed on May 20, 2020, granted, now 11,211,410.
Application 16/879,522 is a continuation of application No. 15/949,678, filed on Apr. 10, 2018, granted, now 10,685,998, issued on Jun. 16, 2020.
Application 15/949,678 is a continuation of application No. 14/900,242, granted, now 9,978,786, issued on May 22, 2018, previously published as PCT/JP2014/003401, filed on Jun. 25, 2014.
Claims priority of application No. 2013-139832 (JP), filed on Jul. 3, 2013.
Prior Publication US 2022/0102400 A1, Mar. 31, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14609 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a first pixel including:
a first on-chip lens;
a first wiring layer;
a first photoelectric conversion region disposed between the first on-chip lens and the first wiring layer; and
a first color filter region disposed between the first on-chip lens and the first photoelectric conversion region in a cross-sectional view;
a second pixel adjacent to the first pixel, the second pixel including:
a second on-chip lens;
a second wiring layer;
a second photoelectric conversion region disposed between the second on-chip lens and the second wiring layer; and
a second color filter region disposed between the second on-chip lens and the second photoelectric conversion region in the cross-sectional view; and
a light shielding film disposed between the first on-chip lens and the first photoelectric conversion region and between the second on-chip lens and the second photoelectric conversion region, in the cross-sectional view,
wherein the light shielding film overlaps a first area of the first photoelectric conversion region and a second area of the second photoelectric conversion region,
wherein the second area is greater than the first area,
wherein light incident upon the light shielding film that overlaps with the second area of the second photoelectric conversion region forms at least two corner areas,
wherein a second aperture shape of the light shielding film that overlaps with the second area of the second photoelectric conversion region is a shape having at least two edges inset from the at least two corner areas, and
wherein the second aperture shape is a hexagonal shape, a semicircular shape or a triangular shape.