US 12,087,760 B2
Semiconductor devices and methods of manufacturing semiconductor devices
Derrick Johnson, Phoenix, AZ (US); Yupeng Chen, San Jose, CA (US); Ralph N. Wall, Pocatello, ID (US); and Mark Griswold, Gilbert, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on May 6, 2022, as Appl. No. 17/662,263.
Prior Publication US 2023/0361107 A1, Nov. 9, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 27/092 (2006.01)
CPC H01L 27/0262 (2013.01) [H01L 27/0928 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a region of semiconductor material comprising:
a top side;
a bottom side opposite to the top side;
a semiconductor substrate of a first conductivity type; and
a semiconductor region of the first conductivity type over the semiconductor substrate;
a well region of a second conductivity type opposite to the first conductivity type in the semiconductor region;
a first doped region of the first conductivity type in the well region;
a second doped region of the second conductivity type in the well region;
a third doped region of the second conductivity type in the semiconductor substrate at the bottom side;
a fourth doped region of the first conductivity type in the semiconductor substrate at the bottom side;
a first conductor coupled to the first doped region and the second doped region at the top side; and
a second conductor coupled to the third doped region and the fourth doped region at the bottom side;
wherein:
one or more of the third doped region or the fourth doped region is a patterned doped region; and
the semiconductor device is configured as a dual-sided semiconductor-controlled rectifier (SCR) device.