US 12,087,754 B2
Hybrid element and method of fabricating the same
Kyungwook Hwang, Seoul (KR); Junsik Hwang, Hwaseong-si (KR); Dongho Kim, Seoul (KR); Hyunjoon Kim, Seoul (KR); Joonyong Park, Suwon-si (KR); and Seogwoo Hong, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 8, 2022, as Appl. No. 17/667,241.
Claims priority of provisional application 63/149,824, filed on Feb. 16, 2021.
Claims priority of application No. 10-2021-0072400 (KR), filed on Jun. 3, 2021; and application No. 10-2021-0150860 (KR), filed on Nov. 4, 2021.
Prior Publication US 2022/0262784 A1, Aug. 18, 2022
Int. Cl. H01L 25/00 (2006.01); H01L 25/16 (2023.01); H01L 27/15 (2006.01)
CPC H01L 25/50 (2013.01) [H01L 25/167 (2013.01); H01L 27/15 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of fabricating a hybrid element, the method comprising:
forming a plurality of first elements on a first substrate;
separating a plurality of second elements grown on a second substrate from the second substrate, a material of the second substrate being different from a material of the first substrate; and
transferring the plurality of second elements, separated from the second substrate, onto the first substrate,
wherein, in the transferring, the plurality of second elements are spaced apart from each other by a fluidic self-assembly method, and
wherein each of the plurality of second elements comprises a shuttle layer grown on the second substrate, an element layer grown on the shuttle layer, and an electrode layer on the element layer.