US 12,087,739 B2
Semiconductor device
Toshiya Tadakuma, Tokyo (JP); and Shin Suzuki, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Jan. 31, 2022, as Appl. No. 17/588,967.
Claims priority of application No. 2021-117289 (JP), filed on Jul. 15, 2021.
Prior Publication US 2023/0017535 A1, Jan. 19, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01); H02P 27/06 (2006.01)
CPC H01L 25/072 (2013.01) [H01L 23/49844 (2013.01); H01L 24/48 (2013.01); H01L 25/18 (2013.01); H01L 2224/48139 (2013.01); H02P 27/06 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor module including a switching device, a first wiring connected to the switching device, a second wiring positioned adjacent to the first wiring and generating induced electromotive force according to a change in an electric current flowing in the first wiring, and a sealing material sealing the switching device, the first wiring and the second wiring, wherein both of one end and the other end of the second wiring are exposed from the sealing material;
a substrate including a GND electrode connected to the one end and on which the semiconductor module is mounted; and
a diode rectifying the induced electromotive force output from the other end.