CPC H01L 24/98 (2013.01) [H01L 21/02068 (2013.01); H01L 21/4835 (2013.01); H01L 24/799 (2013.01); H01L 24/85 (2013.01)] | 20 Claims |
1. A method for performing a semiconductor processing operation, comprising:
configuring a wire bonding machine such that the wire bonding machine performs customized cleaning movements with a capillary tool of the wire bonding machine, the configuring the wire bonding machine including configuring the capillary tool based on location-based parameters and pattern-based parameters relating to performing the customized cleaning movements, the pattern-based parameters defining one or more movements to etch contaminants with the capillary tool;
detecting one or more locations of a semiconductor device including the contaminants;
filtering out detected contaminants that are less than a predetermined size; and
etching the contaminants of at least the predetermined size over the one or more locations of the semiconductor device with the capillary tool, an etching pressure based on a speed of the customized cleaning movements of the capillary tool and a type of the contaminant.
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