US 12,087,727 B2
Joint structure in semiconductor package and manufacturing method thereof
Kuan-Yu Huang, Taipei (TW); Chih-Wei Wu, Yilan County (TW); Sung-Hui Huang, Yilan County (TW); Shang-Yun Hou, Hsinchu (TW); Ying-Ching Shih, Hsinchu (TW); and Cheng-Chieh Li, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/872,023.
Application 17/872,023 is a division of application No. 16/924,147, filed on Jul. 8, 2020, granted, now 11,502,056.
Prior Publication US 2022/0359458 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/81 (2013.01) [H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14132 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/81125 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81908 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a first package component and a second package component stacked upon and electrically connected to each other, the first package component comprising a first conductive bump and a second conductive bump, the second package component comprising a third conductive bump and a fourth conductive bump, and dimensions of the first and second conductive bumps being less than dimensions of the third and fourth conductive bumps;
a first joint structure partially covering the first conductive bump of the first package component and the third conductive bump of the second package component; and
a second joint structure partially covering the second conductive bump of the first package component and the fourth conductive bump of the second package component, wherein a first angle between a sidewall of the first conductive bump and a tangent line at an end point of a boundary of the first joint structure on the sidewall of the first conductive bump is greater than a second angle between a sidewall of the second conductive bump and a tangent line at an end point of a boundary of the second joint structure on the sidewall of the second conductive bump.