US 12,087,688 B2
Semiconductor storage device
Takaco Umezawa, Kamakura Kanagawa (JP); Hiroaki Yamamoto, Yokohama Kanagawa (JP); Shinichi Asou, Yokohama Kanagawa (JP); Tetsuya Tada, Yamato Kanagawa (JP); Katsuaki Mouri, Yokohama Kanagawa (JP); Takahiro Shimokawa, Yokohama Kanagawa (JP); and Syunsuke Sasaki, Kamakura Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Aug. 26, 2021, as Appl. No. 17/458,051.
Claims priority of application No. 2020-208594 (JP), filed on Dec. 16, 2020.
Prior Publication US 2022/0189868 A1, Jun. 16, 2022
Int. Cl. H01L 23/528 (2006.01); H01L 23/522 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/528 (2013.01) [H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor storage device, comprising:
a first signal line extending in a first direction;
a second signal line extending in the first direction and adjacent to the first signal line in a second direction orthogonal to the first direction; and
a third signal line extending in the second direction in a second wiring layer different from a first wiring layer in which the first signal line is disposed, wherein
the first signal line includes:
a trunk wiring extending in the first direction that includes two branch wirings at a particular position of the trunk wiring, the two branch wirings including a first branch wiring extending from one side of the trunk wiring toward the second signal line in the second direction and a second branch wiring extending from another side of the trunk wiring in the second direction, wherein each of the first branch wiring and the second branch wiring includes a connection portion that electrically connects the first signal line and the third signal line.