US 12,087,683 B2
Low-dispersion component in an electronic chip
François Tailliet, Fuveau (FR); and Guilhem Bouton, Peynier (FR)
Assigned to STMICROELECTRONICS (ROUSSET) SAS, Rousset (FR)
Filed by STMICROELECTRONICS (ROUSSET) SAS, Rousset (FR)
Filed on Dec. 30, 2021, as Appl. No. 17/566,437.
Application 17/566,437 is a division of application No. 16/033,109, filed on Jul. 11, 2018, granted, now 11,244,893.
Application 16/033,109 is a division of application No. 15/380,894, filed on Dec. 15, 2016, granted, now 10,043,741, issued on Aug. 7, 2018.
Claims priority of application No. 1656020 (FR), filed on Jun. 28, 2016.
Prior Publication US 2022/0122910 A1, Apr. 21, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/5223 (2013.01) [H01L 21/76895 (2013.01); H01L 22/20 (2013.01); H01L 22/22 (2013.01); H01L 22/32 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 28/60 (2013.01); H01L 22/14 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An integrated circuit chip, comprising:
a main capacitor having first and second electrodes;
a first correction capacitor having first and second electrodes, the first electrode of the first correction capacitor being contiguous with the first electrode of the main capacitor, and the second electrodes of the main capacitor and first correction capacitor being spaced apart from each other;
a metallization adjacent to the main capacitor and the first correction capacitor;
first and second terminals, the first terminal being electrically coupled to the first electrode of the main capacitor and the second terminal being electrically coupled to the metallization;
an insulating layer on the metallization;
a conductive main pad and conductive first and second pads on the insulating layer;
a main conductive via extending through the insulating layer and electrically connecting the main pad to the metallization; and
a first auxiliary conductive via extending through the insulating layer and electrically connecting the metallization to one of the first and second conductive pads.