US 12,087,651 B2
Semiconductor device and method of manufacturing the same
Kazuma Noda, Tokyo (JP); Satoshi Kondo, Tokyo (JP); Junji Fujino, Tokyo (JP); and Michio Ogawa, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Nov. 19, 2021, as Appl. No. 17/455,812.
Claims priority of application No. 2021-027398 (JP), filed on Feb. 24, 2021.
Prior Publication US 2022/0270941 A1, Aug. 25, 2022
Int. Cl. H01L 23/24 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/24 (2013.01) [H01L 23/3121 (2013.01); H01L 23/495 (2013.01); H01L 23/498 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 2224/32157 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a base plate;
a case surrounding a space on the base plate;
a semiconductor element disposed in the space;
a lead electrode connected to an upper surface of the semiconductor element in the space;
a raised portion disposed on an upper surface of the lead electrode in the space to protrude away from the upper surface of the lead electrode to a distal end positioned directly over the upper surface of the lead electrode; and
a sealing resin sealing the semiconductor element and the lead electrode in the space, wherein
the distal end of the raised portion is covered with the sealing resin.