US 12,087,648 B2
Seal ring structure with zigzag patterns and method forming same
Kuan-Hung Chen, Hsinchu (TW); Hong-Seng Shue, Zhubei (TW); Po-Hao Tsai, Taoyuan (TW); and Mirng-Ji Lii, Sinpu Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 13, 2022, as Appl. No. 17/659,048.
Claims priority of provisional application 63/237,677, filed on Aug. 27, 2021.
Prior Publication US 2023/0066360 A1, Mar. 2, 2023
Int. Cl. H01L 23/10 (2006.01); H01L 21/50 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/10 (2013.01) [H01L 21/50 (2013.01); H01L 21/76297 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a plurality of dielectric layers;
forming a lower portion of a seal ring comprising a plurality of metal layers, each extending into one of the plurality of dielectric layers;
depositing a first passivation layer over the plurality of dielectric layers;
forming an opening in the first passivation layer;
forming a via ring in the opening and physically contacting the lower portion of the seal ring;
forming a metal ring over the first passivation layer and joined to the via ring, wherein the via ring and the metal ring form an upper portion of the seal ring, and wherein the metal ring comprises a first edge portion having a zigzag pattern;
forming a second passivation layer on the metal ring; and
performing a singulation process to form a device die, with the seal ring being proximate edges of the device die.