US 12,087,644 B2
Methods of determining process recipes and forming a semiconductor device
Jung-Hau Shiu, New Taipei (TW); Ching-Yu Chang, Taipei (TW); Jei Ming Chen, Tainan (TW); Jr-Yu Chen, Taipei (TW); and Tze-Liang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Oct. 4, 2021, as Appl. No. 17/493,209.
Claims priority of provisional application 63/188,598, filed on May 14, 2021.
Prior Publication US 2022/0367293 A1, Nov. 17, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/66 (2006.01)
CPC H01L 22/12 (2013.01) [H01L 21/02186 (2013.01); H01L 21/0228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising:
performing a first precursor sub-cycle using a first precursor;
performing a first purge sub-cycle using an inert gas; and
performing a second precursor sub-cycle using a second precursor and the inert gas; and
performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.