US 12,087,631 B2
Method for producing a composite structure comprising a thin monocristalline layer on a carrier substrate
Gweltaz Gaudin, Crolles (FR)
Assigned to SOITEC, Bernin (FR)
Appl. No. 17/757,797
Filed by Soitec, Bernin (FR)
PCT Filed Dec. 15, 2020, PCT No. PCT/FR2020/052451
§ 371(c)(1), (2) Date Jun. 21, 2022,
PCT Pub. No. WO2021/136894, PCT Pub. Date Jul. 8, 2021.
Claims priority of application No. 1915720 (FR), filed on Dec. 30, 2019.
Prior Publication US 2022/0359293 A1, Nov. 10, 2022
Int. Cl. H01L 21/78 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 21/324 (2006.01); H01L 23/544 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01)
CPC H01L 21/7806 (2013.01) [H01L 21/02027 (2013.01); H01L 21/187 (2013.01); H01L 21/3247 (2013.01); H01L 23/544 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 2223/54426 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method for manufacturing a composite structure comprising a thin layer of a first single-crystal material on a support substrate, the method comprising:
providing a donor substrate comprising the first single-crystal material having a front face and a back face;
providing a support substrate having a front face, a back face, an edge and a first alignment pattern on one of the faces or on the edge; thereof;
applying a heat treatment at least to the donor substrate, under a controlled atmosphere and at a temperature capable of bringing about a surface reorganization on at least one of the faces of the donor substrate, the surface reorganization resulting in formation of first steps of nanometric amplitude, the first steps oriented parallel to a first main axis;
assembling the donor substrate and the support substrate comprising, before bringing the substrates into contact, optically aligning, to better than ±0.1°, a locating mark indicating the first main axis on the donor substrate relative to at least one alignment pattern of the support substrate; and
transferring the thin layer from the donor substrate onto the support substrate.