US 12,087,627 B2
Method for forming a device with an extended via semiconductor structure
Hung Hsun Lin, Hsinchu (TW); Che-Chih Hsu, Hsinchu (TW); Wen-Chu Huang, Hsinchu (TW); Chinyu Su, Hsinchu (TW); Yen-Yu Chen, Hsinchu (TW); Wei-Chun Hua, Hsinchu (TW); and Wen Han Hung, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2022, as Appl. No. 17/870,213.
Application 17/870,213 is a division of application No. 16/900,567, filed on Jun. 12, 2020, granted, now 11,616,013.
Prior Publication US 2022/0367343 A1, Nov. 17, 2022
Int. Cl. H01L 21/76 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 23/66 (2006.01); H01L 49/02 (2006.01)
CPC H01L 21/76877 (2013.01) [H01L 21/0276 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H01L 23/5227 (2013.01); H01L 23/645 (2013.01); H01L 23/66 (2013.01); H01L 28/10 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first conductive layer on a substrate;
forming a first dielectric layer on and in contact with a first conductive layer;
forming a second dielectric layer on and in contact with the first dielectric layer;
forming a third dielectric layer on and in contact with the second dielectric layer, the third dielectric layer being a different material than the second dielectric layer;
forming a fourth dielectric layer on and in contact with the third dielectric layer, the fourth dielectric layer being a different material than the third dielectric layer;
forming a fifth dielectric layer on and in contact with the fourth dielectric layer, the fifth dielectric layer being a different material than the fourth dielectric layer;
forming a conductive via extending through the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer;
forming a sixth dielectric layer on the fifth dielectric layer; and
forming at least a first conductive portion of an inductor in the fifth dielectric layer and in direct contact with the conductive via.