US 12,087,617 B2
Formation method for air spacer layer and semiconductor structure
Kang You, Hefei (CN); and Jie Bai, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Sep. 28, 2021, as Appl. No. 17/487,854.
Application 17/487,854 is a continuation of application No. PCT/CN2021/095030, filed on May 21, 2021.
Claims priority of application No. 202010505511.4 (CN), filed on Jun. 5, 2020.
Prior Publication US 2022/0020632 A1, Jan. 20, 2022
Int. Cl. H01L 21/764 (2006.01); G11C 5/06 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/764 (2013.01) [H01L 21/76224 (2013.01); H01L 21/7682 (2013.01); H01L 21/76837 (2013.01); H01L 23/5283 (2013.01); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); G11C 5/063 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A formation method for an air spacer layer, comprising:
forming a plurality of parallel spaced first structures on a substrate;
forming a second structure on the substrate, the second structure being located between adjacent first structures of the plurality of parallel spaced first structures, and a first trench being formed between the second structure and one of the adjacent first structures; and
growing an epitaxial layer on a surface of the second structure by an epitaxial growth process, and filling part of the first trench with the epitaxial layer, an unfilled portion of the first trench forming the air spacer layer, wherein the second structure is made of polysilicon, and growing the epitaxial layer on the surface of the second structure by the epitaxial growth process comprises: filling doping gas during the epitaxial growth process to form a doped epitaxial layer.