US 12,087,599 B2
Substrate processing apparatus and apparatus cleaning method
Hidemasa Aratake, Koshi (JP); Osamu Kuroda, Koshi (JP); and Kouzou Kanagawa, Koshi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 16, 2020, as Appl. No. 17/072,158.
Claims priority of application No. 2019-189858 (JP), filed on Oct. 17, 2019.
Prior Publication US 2021/0118704 A1, Apr. 22, 2021
Int. Cl. H01L 21/67 (2006.01); B08B 3/04 (2006.01); B08B 3/14 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/67057 (2013.01) [B08B 3/048 (2013.01); B08B 3/14 (2013.01); H01L 21/02057 (2013.01); H01L 21/67253 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a processing tub allowed to accommodate therein multiple substrates, and configured to store therein a processing liquid;
a storage connected to the processing tub, and configured to store therein the processing liquid drained from the processing tub;
a liquid receiving unit configured to receive the processing liquid overflown from the processing tub;
a liquid receiving unit drain line configured to drain a liquid received from the liquid receiving unit to a first external drain line provided at an outside of the apparatus;
a storage drain line configured to drain a liquid stored in the storage to a second external drain line provided at an outside of the apparatus and different from the first external drain line;
a branch line, connecting a connection portion of the liquid receiving unit drain line with the storage, configured to drain the liquid flowing in the liquid receiving unit drain line to the storage;
a cleaning unit configured to supply a cleaning liquid to remove a crystal originated from the processing liquid to the liquid receiving unit; and
a switching unit provided at the connection portion of the liquid receiving unit drain line and configured to switch a flow destination of the liquid flowing in the liquid receiving unit drain line between the external drain line and the storage.