CPC H01L 21/31144 (2013.01) [H01L 21/76811 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01)] | 20 Claims |
1. A microelectronic structure, comprising:
a metallization layer including a conductive structure;
a first unordered lamellar region laterally spaced apart from and aligned with a bottom portion of the conductive structure; and
a second unordered lamellar region above the first unordered lamellar region, wherein the second unordered lamellar region is laterally spaced apart from and aligned with a top portion of the conductive structure.
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