US 12,087,586 B2
Method of forming chromium nitride layer and structure including the chromium nitride layer
Qi Xie, Wilsele (BE); Eric James Shero, Phoenix, AZ (US); Charles Dezelah, Helsinki (FI); Giuseppe Alessio Verni, Ottignies (BE); and Petri Raisanen, Gilbert, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Apr. 12, 2021, as Appl. No. 17/227,621.
Claims priority of provisional application 63/014,038, filed on Apr. 22, 2020.
Claims priority of provisional application 63/010,560, filed on Apr. 15, 2020.
Prior Publication US 2021/0327715 A1, Oct. 21, 2021
Int. Cl. H01L 21/28 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 29/49 (2006.01)
CPC H01L 21/28088 (2013.01) [C23C 16/34 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 29/4966 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A method of forming a gate electrode structure, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor; and
depositing a chromium nitride layer onto a surface of the substrate,
wherein the deposition process comprises:
providing a chromium precursor to the reaction chamber; and
providing a nitrogen reactant to the reaction chamber, and
wherein the chromium precursor comprises one or more of a chromium amidinate precursor, a chromium amido precursor and a chromium diazadiene precursor.