US 12,087,579 B2
Method for forming semiconductor device
Chung-Yang Huang, Chiayi County (TW); Hao-Ming Chang, Pingtung (TW); Ming Che Li, Hsinchu (TW); Yu-Hsin Hsu, Taichung (TW); Po-Cheng Lai, Hsinchu (TW); Kuan-Shien Lee, Taichung (TW); Wei-Hsin Lin, Hsinchu (TW); Yi-Hsuan Lin, Hsinchu (TW); Wang Cheng Shih, Hsinchu (TW); and Cheng-Ming Lin, Yunlin County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 4, 2021, as Appl. No. 17/307,907.
Application 17/307,907 is a division of application No. 16/211,827, filed on Dec. 6, 2018, granted, now 11,036,129.
Claims priority of provisional application 62/712,464, filed on Jul. 31, 2018.
Prior Publication US 2021/0255542 A1, Aug. 19, 2021
Int. Cl. H01L 21/027 (2006.01); G03F 1/80 (2012.01)
CPC H01L 21/0274 (2013.01) [G03F 1/80 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
receiving a substrate comprising a plurality of die regions; and
performing a photolithography to transfer a first pattern and a first adjustment mark from a photomask to the substrate to simultaneously form a second pattern and a second adjustment mark in at least one die region,
wherein the first pattern has a first dimension, the second pattern has a second dimension, and the second dimension is less than the first dimension, and
wherein a dimension of the second adjustment mark over the substrate is less than a dimension of the first adjustment mark over the photomask.