US 12,087,576 B2
Composition for forming coating film and method for manufacturing semiconductor device
Tokio Nishita, Toyama (JP); Rikimaru Sakamoto, Toyama (JP); Yasunobu Someya, Toyama (JP); and Takahiro Kishioka, Toyama (JP)
Assigned to NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Appl. No. 17/045,304
Filed by NISSAN CHEMICAL CORPORATION, Tokyo (JP)
PCT Filed Apr. 2, 2019, PCT No. PCT/JP2019/014615
§ 371(c)(1), (2) Date Oct. 5, 2020,
PCT Pub. No. WO2019/194175, PCT Pub. Date Oct. 10, 2019.
Claims priority of application No. 2018-073623 (JP), filed on Apr. 6, 2018.
Prior Publication US 2021/0151318 A1, May 20, 2021
Int. Cl. H01L 21/02 (2006.01); C09D 7/20 (2018.01); H01L 23/29 (2006.01)
CPC H01L 21/02282 (2013.01) [C09D 7/20 (2018.01); H01L 21/02164 (2013.01); H01L 21/02318 (2013.01); H01L 23/293 (2013.01)] 3 Claims
 
1. A method for manufacturing a semiconductor device, comprising the steps of:
applying a composition for forming a coating film to surfaces of an insulating layer and a wiring layer containing copper on a substrate on which the insulating layer and the wiring layer are formed;
baking the composition at temperature of 200-300° ° C. to form a coating film on the surfaces of the insulating layer and the wiring layer of the substrate; and then
selectively removing the coating film on the wiring layer using water, so that the coating film remains on the insulating layer and prevents diffusion of the copper of the wiring layer into the insulating layer, wherein the insulating layer i) contains SiO2 as a principal component or ii) contains porous silica as a principal component and has a silanol residue derived from the porous silica on a surface thereof,
wherein the composition for forming a coating film comprises:
(a) a polymer comprising a structural unit represented by the following formula (1a); and
(b) a solvent containing 5 to 25% by weight of at least one organic solvent selected from the group consisting of propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate and 75 to 95% by weight of water:

OG Complex Work Unit Chemistry
wherein X is sulfamic acid, and R1 is a hydrogen atom or a methyl group,
wherein the composition is suitable for forming said coating film on a surface of said insulating layer and said wiring layer containing copper on said substrate by baking the composition on the substrate to form the coating film for preventing diffusion of the copper of the wiring layer into the insulating layer, and
wherein the polymer further comprises a structural unit represented by the following formula (2):

OG Complex Work Unit Chemistry