CPC H01L 21/02274 (2013.01) [C23C 16/45536 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32834 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/02315 (2013.01); H01L 21/0234 (2013.01); H01J 2237/332 (2013.01); H01J 2237/338 (2013.01)] | 12 Claims |
1. A method for processing a substrate for reducing impurities in an oxidative conversion process, the method comprising:
delivering a first reactant gas into a reaction chamber having the substrate therein, a reacting portion of the first reactant gas being absorbed onto a surface of the substrate;
purging a non-reacting portion of the first reactant gas from the reaction chamber, the non-reacting portion of the first reactant gas not being absorbed onto the surface of the substrate;
delivering a second reactant gas into the reaction chamber, the second reactant gas comprising a dihydrogen (H2) gas, a nitrogen-based reactant gas, and an oxygen-based reactant gas delivered substantially concurrently into the reaction chamber, the first reactant gas and the second reactant gas being mixed prior to delivery into the reaction chamber or mixed within the reaction chamber;
igniting a plasma with the second reactant gas in the reaction chamber, the plasma being exposed to the surface of the substrate;
extinguishing the plasma; and
purging the reaction chamber after the plasma is extinguished.
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