US 12,087,556 B2
Plasma processing apparatus and plasma processing method
Yosuke Sato, Kanagawa (JP); Akio Ui, Tokyo (JP); and Hisataka Hayashi, Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Jun. 23, 2021, as Appl. No. 17/356,195.
Application 17/356,195 is a division of application No. 15/461,630, filed on Mar. 17, 2017, abandoned.
Application 15/461,630 is a division of application No. 14/804,913, filed on Jul. 21, 2015, abandoned.
Claims priority of application No. 2014-149241 (JP), filed on Jul. 22, 2014.
Prior Publication US 2021/0319986 A1, Oct. 14, 2021
Int. Cl. H01L 21/3065 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32577 (2013.01) [C23C 16/50 (2013.01); H01J 37/32009 (2013.01); H01J 37/32091 (2013.01); H01J 37/32422 (2013.01); H01J 37/3244 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 37/32706 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/3341 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of plasma processing method with a plasma processing apparatus,
the apparatus comprising:
a substrate electrode disposed in a chamber, the substrate electrode including a plurality of first and a plurality of second electrode elements alternately arranged;
a counter electrode facing on the substrate electrode;
a high-frequency power source configured to output a high-frequency voltage of 40 MHz or more to apply the high-frequency voltage to the substrate electrode for ionizing the process gas to generate plasma;
a low-frequency power source configured to output a low-frequency voltage of 20 MHz or less for introducing ions from the plasma; and
a switching mechanism configured to apply the low-frequency voltage alternately to the plurality of first electrode elements and the plurality of second electrode elements,
the plasma processing method comprising:
mounting a substrate directly or indirectly on the substrate electrode;
decreasing a pressure in the chamber and introducing a process gas;
generating plasma from the process gas; and
attracting ion included in the plasma to the substrate by switching application of the low-frequency voltage to the plurality of first electrode elements and the plurality of second electrode elements, the attracted ion being obliquely incident on the substrate,
wherein
the switching application of the low-frequency voltage is performed so as to repeat a first to a fourth state in sequence while applying the high-frequency voltage to the counter electrode,
the first state being defined by the plurality of first electrode elements connected to a low-frequency power source applying the low-frequency voltage, and the plurality of second electrode elements not connected to the low-frequency power source,
the second state being defined by both of the plurality of first electrode elements and the plurality of second electrode elements connected to the low-frequency power source,
the third state being defined by the plurality of first electrode elements not connected to the low-frequency power source, and the plurality of second electrode elements connected to the low-frequency power source, and
the fourth state being defined by both of the plurality of first electrode elements and the plurality of second electrode elements connected to the low-frequency power source.