US 12,087,550 B2
Device for measuring density of plasma, plasma processing system, and semiconductor device manufacturing method using the same
Vladimir Vsevolodovich Protopopov, Suwon-si (KR); Vasily Grigorievich Pashkovskiy, Suwon-si (KR); Chansoo Kang, Hwaseong-si (KR); Youngdo Kim, Hwaseong-si (KR); Hoonseop Kim, Suwon-si (KR); Sangki Nam, Seongnam-si (KR); Sejin Oh, Hwaseong-si (KR); and Changsoon Lim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 27, 2022, as Appl. No. 17/874,475.
Claims priority of application No. 10-2021-0128947 (KR), filed on Sep. 29, 2021.
Prior Publication US 2023/0102201 A1, Mar. 30, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32201 (2013.01) [H01J 37/32935 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma processing system, comprising:
a plasma processing apparatus configured to generate plasma; and
a plasma density measuring device including:
a first sensor configured to measure a microwave spectrum of an input port reflection parameter of the plasma, the first sensor having a probe including a conductive material and a flat plate shape; and
a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor,
wherein the probe includes a pinhole, the second sensor being configured to measure the optical signal through the pinhole.