US 12,087,397 B1
Dynamic host allocation of physical unclonable feature operation for resistive switching memory
Mehdi Asnaashari, Danville, CA (US)
Assigned to Crossbar, Inc., Santa Clara, CA (US)
Filed by Crossbar, Inc., Santa Clara, CA (US)
Filed on Mar. 30, 2022, as Appl. No. 17/708,491.
Application 17/708,491 is a continuation in part of application No. 17/223,824, filed on Apr. 6, 2021, granted, now 11,430,517.
Claims priority of provisional application 63/005,879, filed on Apr. 6, 2020.
Int. Cl. G11C 7/00 (2006.01); G06F 3/06 (2006.01); G11C 7/24 (2006.01); G11C 13/00 (2006.01)
CPC G11C 7/24 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0673 (2013.01); G11C 13/0023 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a resistive switching memory array comprising a plurality of resistive switching memory cells;
an interface configured to receive at the electronic device a communication from a host device that is external to the electronic device, wherein the communication includes first data indicative of an address of a group of memory cells of the plurality of resistive switching memory cells of the resistive switching memory array for implementing a memory command and second data specifying the memory command from a set of memory commands;
a set of trims that store instructions for configuring the resistive switching memory array to implement memory commands of the set of memory commands and for executing the memory command, wherein the set of trims includes a first trim defining a configuration of the resistive switching memory array and of program signal characteristics for implementing a physical unclonable feature (PUF) write command for the group of memory cells; and
a memory controller configured to:
determine whether the memory command is the PUF write command; and
implement the PUF write command on a set of native resistive switching memory cells of the plurality of resistive switching memory cells that includes at least the group of memory cells in response to the memory command being the PUF write command.