US 12,087,379 B2
Calibration of threshold voltage shift values
Radu Ioan Stoica, Zurich (CH); Roman Alexander Pletka, Uster (CH); Nikolas Ioannou, Zurich (CH); Nikolaos Papandreou, Thalwil (CH); Charalampos Pozidis, Thalwil (CH); Timothy J. Fisher, Cypress, TX (US); and Aaron Daniel Fry, Richmond, TX (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Aug. 23, 2022, as Appl. No. 17/821,608.
Prior Publication US 2024/0071542 A1, Feb. 29, 2024
Int. Cl. G11C 16/06 (2006.01); G06F 11/26 (2006.01); G06F 11/263 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 29/52 (2006.01)
CPC G11C 29/021 (2013.01) [G06F 11/26 (2013.01); G06F 11/263 (2013.01); G11C 16/3404 (2013.01); G11C 29/52 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of calibrating threshold voltage shift values for a non-volatile memory unit including strings of memory cells organized into memory pages, the memory pages each organized into blocks, the method comprising:
performing a first read operation to read a given page of the memory pages utilizing given one or more threshold voltage shift values for the given page;
in response to a read failure of the first read operation, determining one or more corrected threshold voltage shift values based on one or more reference threshold voltage shift values of one or more reference pages of the memory pages; and
performing a second read operation to read the given page utilizing the one or more corrected threshold voltage shift values.