US 12,087,359 B2
Memory cell selector for high-voltage set and reset operations
Frank Tzen-Wen Guo, Danville, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 13, 2022, as Appl. No. 17/838,718.
Prior Publication US 2023/0402093 A1, Dec. 14, 2023
Int. Cl. G11C 13/00 (2006.01)
CPC G11C 13/003 (2013.01) [G11C 2213/79 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory cell comprising:
a memory element comprising a first terminal and a second terminal; and
a selector comprising:
a first transistor between a first voltage and the first terminal of the memory element;
a third transistor between the first transistor and the first terminal of the memory element, wherein the third transistor is of a same type as the first transistor;
a second transistor between a second voltage and the first terminal of the memory element, wherein the first voltage is higher than the second voltage; and
a fourth transistor between the second transistor and the first terminal of the memory element, wherein the fourth transistor is of a same type as the second transistor.