US 12,087,231 B2
Scan signal driver and display device including the same
Jae Hyun Park, Yongin-si (KR); Hyeon Sik Kim, Yongin-si (KR); and Hye Seok Na, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Sep. 13, 2023, as Appl. No. 18/466,047.
Claims priority of application No. 10-2023-0004483 (KR), filed on Jan. 12, 2023.
Prior Publication US 2024/0242679 A1, Jul. 18, 2024
Int. Cl. G09G 3/3266 (2016.01); G09G 3/32 (2016.01)
CPC G09G 3/3266 (2013.01) [G09G 3/32 (2013.01); G09G 2310/0267 (2013.01); G09G 2330/06 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A scan signal driver comprising:
a plurality of stages that sequentially outputs a plurality of scan signals based on a plurality of driving voltages and a plurality of external signals received by the plurality of stages, wherein
each of the plurality of stages includes a plurality of transistors and at least one specific node electrically connected to ones of the plurality of transistors, the plurality of transistors including a plurality of first transistors and a plurality of second transistors,
each of the plurality of first transistors includes:
a first gate electrode that receives any one of the plurality of external signals;
a first semiconductor layer overlapping at least a portion of the first gate electrode, the first semiconductor layer including ‘n’ number of channel areas; and
a first source electrode and a first drain electrode spaced apart from each other by a distance, the first gate electrode disposed at a center between the first source electrode and the first drain electrode, and
each of the plurality of second transistors includes:
a second gate electrode electrically connected to any one of the at least one specific node;
a second semiconductor layer overlapping at least a portion of the second gate electrode, the second semiconductor layer including ‘m’ number of channel areas smaller than the ‘n’ number of channel areas; and
a second source electrode and a second drain electrode spaced apart from each other by a distance, the second gate electrode being disposed at a center between the second source electrode and the second drain electrode.