US 12,086,420 B2
Memory management method and electronic device
Jiseop Song, Suwon-si (KR); Jiman Kwon, Suwon-si (KR); Hakryoul Kim, Suwon-si (KR); Jaehyeon Park, Suwon-si (KR); Jooyong Sin, Suwon-si (KR); and Dongwook Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 6, 2023, as Appl. No. 18/106,131.
Application 18/106,131 is a continuation of application No. PCT/KR2021/008712, filed on Jul. 8, 2021.
Claims priority of application No. 10-2020-0097160 (KR), filed on Aug. 4, 2020.
Prior Publication US 2023/0185458 A1, Jun. 15, 2023
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0616 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a memory management module;
a processor operatively connected to the memory management module; and
a memory controlled by the memory management module and operatively connected to the processor,
wherein the memory is configured to store instructions which, when executed, cause the processor to:
execute at least one process,
identify a rate at which the at least one process is terminated, based on a preconfigured first cycle,
determine a number of times the identified rate exceeds a first threshold value, and
based on a determination that the number of times the identified rate exceeds the first threshold value is greater than a second threshold value, reboot the electronic device.