CPC G06F 1/28 (2013.01) [G06F 1/206 (2013.01)] | 35 Claims |
1. A method, comprising:
determining a first temperature value associated with a first mode of operation of a memory device;
selecting a reference voltage offset value for the memory device based at least in part on mapping the first temperature value associated with the memory device to a relationship between reference voltage offset values and a plurality of temperature differential values associated with the memory device, wherein at least one temperature differential value of the plurality of temperature differential values associated with the memory device corresponds to a difference between the first temperature value and a second temperature value associated with a second mode of operation of the memory device;
adjusting a reference voltage value associated with the memory device based at least in part on the reference voltage offset value; and
operating the memory device in accordance with the reference voltage value based at least in part on adjusting the reference voltage value.
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