US 12,085,976 B2
Semiconductor die, electronic component, electronic apparatus and manufacturing method thereof
Yikai Liang, Shanghai (CN); Junhai Liu, Shanghai (CN); Wenqi Li, Shanghai (CN); Linglan Zhang, Shanghai (CN); Dongcai Li, Shanghai (CN); and Zheng Tian, Shanghai (CN)
Assigned to Shanghai Biren Technology Co., Ltd, Shanghai (CN)
Filed by Shanghai Biren Technology Co., Ltd, Shanghai (CN)
Filed on Jun. 13, 2022, as Appl. No. 17/838,283.
Claims priority of application No. 202110663710.2 (CN), filed on Jun. 16, 2021.
Prior Publication US 2022/0404857 A1, Dec. 22, 2022
Int. Cl. G06F 1/06 (2006.01); H03L 7/08 (2006.01)
CPC G06F 1/06 (2013.01) [H03L 7/08 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor die, comprising:
a first die to die (D2D) transceiver, comprising:
a first D2D transmitter, configured to send data to a second D2D receiver in a second D2D transceiver of another semiconductor die using a first reference clock signal; and
a first D2D receiver, configured to receive data from a second D2D transmitter in the second D2D transceiver using a second reference clock signal,
a P2P link, configured to establish a communication channel with an external electronic device to transmit the data, the P2P link comprising:
a first P2P sub-link, configured to establish a first communication channel with the external electronic device to transmit the data using a fourth reference clock signal from outside the semiconductor die or a second phase locked loop.