US 12,085,859 B2
Patterning of multilayer transition metal dichalcogenides
Timur Shegai, Gothenburg (SE); and Battulga Munkhbat, Västra Frölunda (SE)
Assigned to SMENA Catalysis AB, Gothenburg (SE)
Appl. No. 17/794,929
Filed by SMENA Catalysis AB, Gothenburg (SE)
PCT Filed Jan. 25, 2021, PCT No. PCT/SE2021/050041
§ 371(c)(1), (2) Date Jul. 22, 2022,
PCT Pub. No. WO2021/154141, PCT Pub. Date Aug. 5, 2021.
Claims priority of application No. 2050069-0 (SE), filed on Jan. 27, 2020.
Prior Publication US 2023/0118913 A1, Apr. 20, 2023
Int. Cl. G03F 7/32 (2006.01); C09K 13/00 (2006.01)
CPC G03F 7/32 (2013.01) [C09K 13/00 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for forming a patterned multilayer 2D material, the method comprising:
providing a multilayer 2D material comprising at least two layers of the 2D material,
pre-patterning the multilayer 2D material by using a lithographic patterning method followed by a first etching process in order to form a pre-patterned structure in the multilayer 2D material;
applying a second etching process on the pre-patterned structure such that a first shape of at least one portion of the patterned structure is transformed into a second shape thereby forming a patterned multilayer 2D material sample, wherein the second etching process is an anisotropic etching process,
wherein the anisotropic etching process is a wet etching process comprising:
immersing the pre-patterned multilayer 2D material in a solution comprising an oxidizing agent, for a predefined time period at a predefined temperature.