US 12,085,857 B2
Composition for forming silicon-containing resist underlayer film and patterning process
Tsutomu Ogihara, Joetsu (JP); Yusuke Biyajima, Joetsu (JP); and Masahiro Kanayama, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Jul. 14, 2020, as Appl. No. 16/928,777.
Claims priority of application No. 2019-135144 (JP), filed on Jul. 23, 2019.
Prior Publication US 2021/0026246 A1, Jan. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/11 (2006.01); C08G 77/18 (2006.01); C08G 77/26 (2006.01); C09D 183/06 (2006.01); C09D 183/08 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC G03F 7/11 (2013.01) [C08G 77/18 (2013.01); C08G 77/26 (2013.01); C09D 183/06 (2013.01); C09D 183/08 (2013.01); G03F 7/70383 (2013.01); H01L 21/0274 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2006 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31138 (2013.01); H01L 21/32139 (2013.01)] 14 Claims
 
1. A patterning process comprising:
forming an organic underlayer film on a body to be processed using a coating-type organic underlayer film material;
forming a silicon-containing resist underlayer film on the organic underlayer film using a composition for forming a silicon-containing resist underlayer film;
forming a photoresist film on the silicon-containing resist underlayer film using a chemically amplified resist composition;
exposing the photoresist film after a heat treatment and dissolving an unexposed portion of the photoresist film using an organic solvent developer to form a negative-type pattern;
transferring the pattern to the silicon-containing resist underlayer film by dry etching using the photoresist film having the formed pattern as a mask;
transferring the pattern to the organic underlayer film by dry etching using the silicon-containing resist underlayer film having the transferred pattern as a mask; and
transferring the pattern to the body to be processed by dry etching using the organic underlayer film having the transferred pattern as a mask,
wherein the composition for forming a silicon-containing resist underlayer film comprises:
a thermosetting silicon-containing material containing any one or more of:
a repeating unit shown by the following general formula (Sx-1):

OG Complex Work Unit Chemistry
wherein R1 represents an organic group having one or more silanol groups, hydroxy groups, or carboxy groups, or an organic group from which a protecting group is eliminated by an action of acid and/or heat to generate one or more silanol groups, hydroxy groups, or carboxy groups;
a repeating unit shown by the following general formula (Sx-2):

OG Complex Work Unit Chemistry
wherein each R2 is independently the same as R1 or represents a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; and
a partial structure shown by the following general formula (Sx-3):

OG Complex Work Unit Chemistry
wherein each R3 is independently the same as R1 or represents a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; and
a compound shown by the following general formula (P-0):

OG Complex Work Unit Chemistry
wherein in the formula (P-0):
R100 represents a divalent organic group substituted with one or more fluorine atoms;
R101 and R102 each independently represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms substituted or unsubstituted with a hetero atom selected from the group consisting of an oxygen atom, a sulfur atom, a nitrogen atom, and a halogen atom;
R103 represents a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms substituted or unsubstituted with a hetero atom selected from the group consisting of an oxygen atom, a sulfur atom, a nitrogen atom, and a halogen atom;
R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with the sulfur atom of the sulfonium ion in the formula (P-0); and
L104 represents a single bond or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero atom or optionally interposed by a hetero atom.