US 12,085,751 B2
Semiconductor device and methods of formation
Wei-kang Liu, Taichung (TW); Chih-Tsung Shih, Hsinchu (TW); Hau-Yan Lu, Hsinchu (TW); YingKit Felix Tsui, Cupertino, CA (US); and Lee-Shian Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 8, 2022, as Appl. No. 17/811,381.
Prior Publication US 2024/0012199 A1, Jan. 11, 2024
Int. Cl. G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/13 (2006.01); G02B 6/134 (2006.01); G02B 6/136 (2006.01)
CPC G02B 6/122 (2013.01) [G02B 6/131 (2013.01); G02B 6/1347 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12126 (2013.01); G02B 2006/12169 (2013.01); G02B 2006/12173 (2013.01); G02B 6/1342 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photonics structure, comprising:
a substrate;
a cladding layer on a top surface of the substrate;
a waveguide structure, on a top surface of the cladding layer, comprising:
a plurality of sidewalls, and
an end surface,
wherein the waveguide structure is configured to propagate an electromagnetic wave along an approximately linear path between the plurality of sidewalls towards the end surface, and
wherein the end surface is oriented approximately orthogonal to the approximately linear path; and
an optical attenuator structure comprising portions directly on surfaces of opposing sidewalls of the plurality of sidewalls near the end surface,
wherein a length of the optical attenuator structure corresponds to a portion of a length of the waveguide structure,
wherein an optical attenuator material is excluded from sidewalls, of the plurality of sidewalls, other than the opposing sidewalls,
wherein the optical attenuator structure comprises a doped material, and
wherein the doped material comprises a polysilicon material, a germanium material, or a silicon material.