US 12,084,920 B1
Polycrystalline diamond compacts and methods of fabricating same
Greg Carlos Topham, Spanish Fork, UT (US)
Assigned to US SYNTHETIC CORPORATION, Orem, UT (US)
Filed by US SYNTHETIC CORPORATION, Orem, UT (US)
Filed on Jul. 22, 2020, as Appl. No. 16/935,475.
Application 16/935,475 is a continuation of application No. 15/618,703, filed on Jun. 9, 2017, granted, now 10,760,344.
Application 15/618,703 is a continuation of application No. 14/199,571, filed on Mar. 6, 2014, granted, now 9,702,198, issued on Jul. 11, 2017.
Claims priority of provisional application 61/776,884, filed on Mar. 12, 2013.
Int. Cl. E21B 10/567 (2006.01); B22F 3/24 (2006.01); C22C 26/00 (2006.01); F16C 33/04 (2006.01); F16C 33/14 (2006.01); F16C 33/26 (2006.01); B22F 5/00 (2006.01); F16C 17/02 (2006.01); F16C 17/04 (2006.01)
CPC E21B 10/5673 (2013.01) [B22F 3/24 (2013.01); C22C 26/00 (2013.01); E21B 10/567 (2013.01); F16C 33/043 (2013.01); F16C 33/14 (2013.01); F16C 33/26 (2013.01); B22F 2005/001 (2013.01); B22F 2998/10 (2013.01); B22F 2999/00 (2013.01); F16C 17/02 (2013.01); F16C 17/04 (2013.01); F16C 2223/42 (2013.01); F16C 2240/40 (2013.01); F16C 2240/50 (2013.01); F16C 2240/60 (2013.01); F16C 2352/00 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including:
an upper surface;
a lower surface spaced from the upper surface;
at least one side surface;
a chamfer extending between the upper surface and the at least one side surface, the chamfer exhibiting a chamfer height measured relative to a cross-sectional view of the polycrystalline diamond compact from the upper surface to an edge of the chamfer closest to the at least one side surface;
a leached region from which an interstitial constituent is depleted, the leached region extending inwardly from the upper surface to a depth, wherein a cross-sectional view of the leached region exhibits a depth as measured inwardly from the chamfer that decreases along the chamfer in a direction towards the at least one side surface; and
an unleached region extending between the lower surface and the leached region, the unleached region having a magnetic saturation of about 15 G·cm3/g or less and a specific permeability of about 0.10 G·cm3/g·Oe or less, the unleached region extending from the lower surface to the leached region and having an outer region extending inward from the at least one side surface and increasing in thickness from the at least one side surface.