US 12,084,791 B2
Method of producing large EMI shielded GaAs and GaP infrared windows
Peter G. Schunemann, Hollis, NH (US); and Kevin T. Zawilski, Arlington, MA (US)
Assigned to BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US)
Filed by BAE SYSTEMS Information and Electronic Systems Integration Inc., Nashua, NH (US)
Filed on Dec. 1, 2022, as Appl. No. 18/073,183.
Prior Publication US 2024/0183075 A1, Jun. 6, 2024
Int. Cl. C30B 29/42 (2006.01); C23C 16/30 (2006.01); C30B 29/44 (2006.01); C30B 33/06 (2006.01)
CPC C30B 33/06 (2013.01) [C23C 16/30 (2013.01); C30B 29/42 (2013.01); C30B 29/44 (2013.01); Y10T 428/162 (2015.01)] 20 Claims
OG exemplary drawing
 
1. An infrared window comprising a GaAs slab having a slab largest dimension that is greater than eight inches, or a GaP slab having a slab largest dimension that is greater than four inches, said slab being formed by grinding and polishing surrounding sides of a plurality of rectangular parallelepiped slabs, referred to herein as rectangular slabs, and then aligning and contacting the surrounding sides of the rectangular slabs so as to optically bond the rectangular slabs to each other, thereby forming a GaAs monolithic window slab having a largest dimension that is greater than eight inches or a GaP monolithic window slab having a largest dimension that is greater than four inches.