US 12,084,789 B2
8-inch n-type SiC single crystal substrate
Tomohiro Shonai, Tokyo (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Filed by Resonac Corporation, Tokyo (JP)
Filed on May 30, 2023, as Appl. No. 18/203,254.
Claims priority of application No. 2022-090469 (JP), filed on Jun. 2, 2022.
Prior Publication US 2023/0392287 A1, Dec. 7, 2023
Int. Cl. C30B 29/36 (2006.01)
CPC C30B 29/36 (2013.01) 8 Claims
OG exemplary drawing
 
1. An 8-inch n-type SiC single crystal substrate, wherein the diameter is in a range of 195 mm to 205 mm, the thickness is in a range of 300 μm to 650 μm, the thicknesses of work-affected layers on both the front and back surfaces are 0.1 nm or less, and the dopant concentration is 2×1018/cm3 or more and 6×1019/cm3 or less at least five arbitrarily selected points in the plane at the same depth from the main surface within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.