CPC C23C 16/45538 (2013.01) [G03F 7/167 (2013.01); C23C 16/45527 (2013.01); C23C 16/45529 (2013.01)] | 14 Claims |
1. A method of forming a photoresist layer over a substrate in a vacuum chamber, comprising:
providing a first metal precursor vapor into the vacuum chamber;
providing a first oxidant vapor into the vacuum chamber, wherein a reaction between the first metal precursor vapor and the first oxidant vapor results in the formation of the photoresist layer on a surface of the substrate, wherein the photoresist layer is a metal oxo containing material;
providing a second metal precursor vapor into the vacuum chamber, wherein the second metal precursor vapor is different than the first metal precursor vapor;
providing a second oxidant vapor into the vacuum chamber, wherein the second oxidant vapor is different than the first oxidant vapor, and wherein providing the second oxidant vapor or the first oxidant vapor into the vacuum chamber comprises providing the second oxidant vapor or the first oxidant vapor together with an oxygen-containing gas, the oxygen-containing gas different than the corresponding one of the second oxidant vapor or the first oxidant vapor, wherein the oxygen-containing gas comprises acrylic acid, and wherein the corresponding one of the second oxidant vapor or the first oxidant vapor comprises a glycol; and
alternating between (i) providing the first metal precursor vapor and the first oxidant vapor into the chamber, and (ii) providing the second metal precursor vapor and the second oxidant vapor into the chamber.
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