US 12,084,760 B2
Method of processing substrate, recording medium, substrate processing apparatus, and method of manufacturing semiconductor device
Takuya Joda, Toyama (JP); Arito Ogawa, Toyama (JP); and Atsuro Seino, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Feb. 2, 2023, as Appl. No. 18/163,580.
Application 18/163,580 is a continuation of application No. PCT/JP2021/026749, filed on Jul. 16, 2021.
Claims priority of application No. 2020-155517 (JP), filed on Sep. 16, 2020.
Prior Publication US 2023/0257873 A1, Aug. 17, 2023
Int. Cl. C23C 16/30 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/303 (2013.01) [C23C 16/4408 (2013.01); C23C 16/4412 (2013.01); C23C 16/45544 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) processing the substrate by supplying a processing gas into a process container to form a film on the substrate and on an inner wall of the process container;
(b) unloading the processed substrate from the process container; and
(c) supplying a modifying gas, which suppresses abnormal crystal growth in the film formed on the inner wall of the process container, into the process container after the processed substrate is unloaded from the process container,
wherein in (c), at least one, which is selected from the group of a gas forming an amorphous layer at least on an inner wall of the process container, a gas containing at least one selected from the group consisting of silicon, metal, and halogen, or a gas used for etching an abnormal crystal growth in the film, is supplied as the modifying gas.