US 12,084,757 B2
Method of manufacturing semiconductor device, substrate processing apparatus, method of processing substrate, and recording medium
Arito Ogawa, Toyama (JP); and Atsuro Seino, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Aug. 19, 2022, as Appl. No. 17/891,449.
Application 17/891,449 is a continuation of application No. 17/476,197, filed on Sep. 15, 2021, granted, now 11,424,127.
Claims priority of application No. 2020-157225 (JP), filed on Sep. 18, 2020.
Prior Publication US 2022/0392770 A1, Dec. 8, 2022
Int. Cl. C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/0281 (2013.01) [C23C 16/18 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) supplying a gas containing an organic ligand to a substrate;
(b) supplying a metal-containing gas to the substrate;
(c) supplying a first reducing gas to the substrate; and
(d) before (a), supplying a second reducing gas, which is different from the first reducing gas, to the substrate,
wherein after (a) and (d), a metal-containing film is formed on the substrate by performing (b) and (c) two or more times, respectively.