US 12,084,755 B2
Method for coating a substrate with tantalum nitride
Marjorie Christine Cavarroc, Moissy-Cramayel (FR); Baptiste Simon Giroire, Bordeaux (FR); Lionel Teule-Gay, Bordeaux (FR); and Angélique Poulon, Arsac (FR)
Assigned to SAFRAN, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); and UNIVERSITE DE BORDEAUX, Bordeaux (FR)
Appl. No. 17/616,828
Filed by SAFRAN, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); and UNIVERSITE DE BORDEAUX, Bordeaux (FR)
PCT Filed May 14, 2020, PCT No. PCT/FR2020/050801
§ 371(c)(1), (2) Date Dec. 6, 2021,
PCT Pub. No. WO2020/249879, PCT Pub. Date Dec. 17, 2020.
Claims priority of application No. 1906168 (FR), filed on Jun. 11, 2019.
Prior Publication US 2022/0349042 A1, Nov. 3, 2022
Int. Cl. C23C 14/34 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/3485 (2013.01) [C23C 14/0036 (2013.01); C23C 14/0641 (2013.01); C23C 14/35 (2013.01); H01J 37/3405 (2013.01); H01J 37/3426 (2013.01); H01J 37/3467 (2013.01); H01J 2237/332 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A process for coating a substrate with tantalum nitride by a high-power impulse magnetron sputtering technique, wherein a tantalum target is used and the process comprising depositing the coating of the substrate in an atmosphere containing nitrogen, a bias of the target being controlled during the coating by imposing on the target a superposition of a continuous bias at a potential comprised between −300 V and −100 V and of a pulsed bias whose pulses have a potential comprised between −1200 V and −400 V,
wherein the process comprises at least one of:
(a) coating the substrate with at least hexagonal tantalum nitride by imposing on the target the superposition of a continuous bias at a potential comprised between −199 V and −100 V and of a pulsed bias whose pulses have a potential comprised between −900 V and −701 V, and
(b) coating the substrate with at least face-centered cubic tantalum nitride by imposing on the target the superposition of a continuous bias at a potential comprised between −300 V and −200 V and of a pulsed bias whose pulses have a potential comprised between −700 V and −500 V.